Micron Technology is the latest recipient of direct funding from the US Department of Commerce under the CHIPS and Science Act. The US-based computer memory and data manufacturer is set to receive a $6.14 billion federal grant to support the expansion of its Dynamic random-access memory (DRAM) fabs in Syracuse, New York. TSMC and Samsung received similar subsidies earlier this month.
Micron’s roadmap plans include investing upwards of $100 billion in the state of New York and creating over 13,000 jobs in the process. The new round of funding is also set to unlock a $25 billion investment in a separate DRAM fab in Boise, Idaho in proximity to Micron’s headquarters and R&D facility. The new investment is part of a broader plan to bring 40% of Micron’s DRAM production to the US over the next two decades. Micron’s leading-edge DRAM chips are currently manufactured in Japan and Taiwan.
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